Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

被引：10
作者：
Dragoman, Mircea [1 ]
Dinescu, Adrian [1 ]
Nastase, Florin [1 ]
Dragoman, Daniela [2 ,3 ]
机构：
[1] Natl Inst Res & Dev Microtechnol IMT, Str Erou Iancu Nicolae 126 A, Voluntari 077191, Romania
[2] Univ Bucharest, Phys Fac, POB MG 11, Bucharest 077125, Romania
[3] Acad Romanian Scientists, Str Ilfov 3, Bucharest 050044, Romania
来源：
NANOMATERIALS | 2020年 / 10卷 / 07期
关键词：
graphene; HfO2-based ferroelectrics; memtransistors; MEMRISTOR;
D O I：
10.3390/nano10071404
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.
引用
收藏
页码：1 / 7
页数：7
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