Ka-Band GaN-on-Si 4W MMIC High Power Amplifier for Millimetre-wave Radar

被引：0
|
作者：
Cipriani, Elisa [1 ]
Colantonio, Paolo [1 ]
Giannini, Franco [1 ]
机构：
[1] Univ Roma Tor Vergata, Rome, Italy
来源：
2019 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR) | 2019年
关键词：
D O I：
10.1109/pawr.2019.8708736
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This contribution presents the design of a Monolithic Microwave Integrated Circuits (MMIC) power amplifier (PA) developed for radar applications in the upper Ka-band (35 GHz - 40 GHz). The MMIC is designed by using a 0.1 mu m Gallium Nitride on Silicon (GaN-on-Si) millimetre wave process and employs a single-ended, four-stage configuration for an enhanced gain. The designed power amplifier can provide 4W of output power with an associated gain of at least 19 dB and minimum 25% of power added efficiency (PAE) in the targeted frequency range.
引用
收藏
页码：82 / 84
页数：3
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