MOVPE growth of zincblende magnesium sulphide

被引：52

作者：

Konczewicz, L ^{[1
]}

Bigenwald, P ^{[1
]}

Cloitre, T ^{[1
]}

Chibane, M ^{[1
]}

Ricou, R ^{[1
]}

Testud, P ^{[1
]}

Briot, O ^{[1
]}

Aulombard, RL ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34095 MONTPELLIER 5,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00832-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The successful growth of MgS epitaxial layers with the MOVPE technique is reported. The samples were grown on GaAs substrates in a classical horizontal reactor, using bis(methylcyclopentadienyl) magnesium and H2S as precursors. The zincblende structure of MgS layers is evidenced by careful X-ray diffraction analysis. The lattice constant is found to be about 5.66 Angstrom. The influence of the growth temperature on the morphology and quality of the layers is studied in detail.

引用

页码：117 / 120

页数：4

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