Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

被引:46
作者
Paviet-Salomon, Bertrand [1 ]
Tomasi, Andrea [2 ]
Descoeudres, Antoine [1 ]
Barraud, Loris [1 ]
Nicolay, Sylvain [1 ]
Despeisse, Matthieu [1 ]
De Wolf, Stefaan [2 ]
Ballif, Christophe [2 ]
机构
[1] Ctr Suisse Elect & Microtech SA, PV Ctr, CH-2002 Neuchatel, Switzerland
[2] Ecole Polytech Fed Lausanne, Inst Microengn IMT, Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 05期
基金
瑞士国家科学基金会;
关键词
Heterojunction; interdigitated back-contact; optical losses; parasitic absorption; silicon; solar cell; FRONT SURFACE; MICROCRYSTALLINE SILICON; EFFICIENCY; PASSIVATION; ABSORPTION; REFLECTOR; NITRIDE;
D O I
10.1109/JPHOTOV.2015.2438641
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We analyze the optical losses that occur in interdigitated back-contacted amorphous/crystalline silicon heterojunction solar cells. We show that in our devices, the main loss mechanisms are similar to those of two-side contacted heterojunction solar cells. These include reflection and escape-light losses, as well as parasitic absorption in the front passivation layers and rear contact stacks. We then provide practical guidelines to mitigate such reflection and parasitic absorption losses at the front side of our solar cells, aiming at increasing the short-circuit current density in actual devices. Applying these rules, we processed a back-contacted silicon heterojunction solar cell featuring a short-circuit current density of 40.9 mA/cm(2) and a conversion efficiency of 22.0%. Finally, we show that further progress will require addressing the optical losses occurring at the rear electrodes of the back-contacted devices.
引用
收藏
页码:1293 / 1303
页数:11
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