Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC

被引：12

作者：

Schmid, F ^{[1
]}

Pensl, G ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Angew Phys, DE-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1707220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The annealing behavior of P+ and N+ ions implanted into p-type 4H-SiC epilayers is studied by a temperature-dependent Hall-effect. Detailed investigations reveal that the electrical activation of implanted P+ ions is governed by the site competition effect, while implanted N+ ions react with intrinsic defects during the annealing step and can form thermally stable and electrically inactive complexes. In this way, the electrical activation of implanted N+ ions is strongly reduced. (C) 2004 American Institute of Physics.

引用

页码：3064 / 3066

页数：3

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