Heating near implanted medical devices by the MRI RF-magnetic field

被引：42
作者：
Nyenhuis, JA [1 ]
Kildishev, AV
Bourland, JD
Foster, KS
Graber, G
Athey, TW
机构：
[1] Purdue Univ, Hillenbrand Biomed Engn Ctr, W Lafayette, IN 47907 USA
[2] CL McIntosh Associates, Rockville, MD 20852 USA
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期
关键词：
Magnetic Resonance Imaging; medical implant; MRI safety; RF heating; infusion pump;
D O I：
10.1109/20.800779
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature rise in the vicinity of a medical implant due to the RF field in Magnetic Resonance Imaging taken to be a conducting cylinder resembling the geometry of a commercial infusion pump. Measurements of temperature rise were made with the pump in a phantom in a clinical imager, The RF protocol was 20-minutes long and produced a specific absorption rate (SAR) of 0.95 W/kg in the 34-kg phantom, In the measurements, the maximal temperature rise near the implant (0.66 degrees C) was about 3 times the control rise (0.23 degrees C) with no implant. The calculations are consistent with experiment.
引用
收藏
页码：4133 / 4135
页数：3
相关论文
共 7 条
1