Micro-Raman evaluation of polycrystalline silicon MEMS devices

被引：0

作者：

Serrano, Justin R.

Phinney, Leslie M. ^{[1
]}

Kearney, Sean P. ^{[1
]}

机构：

[1] Engn Sci Ctr, Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

SURFACE ENGINEERING FOR MANUFACTURING APPLICATIONS | 2006年 / 890卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Micro-Raman spectroscopy is a valuable tool for thermometry of operational polysilicon MEMS devices. By using the temperature-calibrated response of the optical phonon peak of the polysilicon Raman signature and the micron-scale spatial resolution achieved with a 488 nm Ar+ laser Raman probe, we have obtained spatially resolved steady-state thermal profiles of Joule-heated thermal flexure actuators. The measured thermal profiles are further compared to one-dimensional numerical models of the thermal response of the electrically heated devices.

引用

页码：131 / +

页数：2

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