Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

被引:2
作者
Utochkin, V. V. [1 ,2 ]
Fadeev, M. A. [1 ]
Krishtopenko, S. S. [3 ,4 ]
Rumyantsev, V. V. [1 ,2 ]
Aleshkin, V. Ya. [1 ,2 ]
Dubinov, A. A. [1 ,2 ]
Morozov, S. V. [1 ,2 ]
Semyagin, B. R. [5 ]
Putyato, M. A. [5 ]
Emelyanov, E. A. [5 ]
Preobrazhenskii, V. V. [5 ]
Gavrilenko, V. I. [1 ,2 ]
机构
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603087, Russia
[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
[3] CNRS, Lab Charles Coulomb, F-34095 Montpellier, France
[4] Univ Montpellier, F-34095 Montpellier, France
[5] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
基金
俄罗斯基础研究基金会;
关键词
quantum well; InAs; GaInSb; photoluminescence; waveguide heterostructure;
D O I
10.1134/S1063782620090304
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.
引用
收藏
页码:1119 / 1122
页数:4
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