Time Variant Layer Control in Atmospheric Pressure Chemical Vapor Deposition Based Growth of Graphene

被引：0

作者：

Qaisi, Ramy ^{[1
]}

Smith, Casey ^{[1
]}

Hussain, Muhammad M. ^{[1
]}

机构：

[1] KAUST, Integrated Nanotechnol Lab, Thuwal 239556900, Saudi Arabia

来源：

2013 SAUDI INTERNATIONAL ELECTRONICS, COMMUNICATIONS AND PHOTONICS CONFERENCE (SIECPC) | 2013年

关键词：

graphene; atmospheric pressure chemical vapor deposition (APCVD); Raman spectroscopy; CARBON; FILMS; GRAPHITE; FERROMAGNETISM; SIZE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis.

引用

页数：6

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