Avalanche noise in submicrometre pin diodes

被引：9
作者：
Herbert, DC
机构：
[1] DRA Electronics Sector, Malvern, Worcestershire, WR14 3PS, St. Andrews Road
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 14期
关键词：
pin diodes; semiconductor device noise;
D O I：
10.1049/el:19970828
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown that recent measurements of noise suppression in thin GaAs pin diodes by Hu er al. can be explained as a dead space phenomenon and are consistent with the alpha/beta ratio approaching unity at high electric fields.
引用
收藏
页码：1257 / 1258
页数：2
相关论文
共 8 条
  • [1] BULLMAN GE, 1983, IEEE ELECTRON DEVICE, V4, P181
  • [2] BAND-STRUCTURE ENGINEERING OF HOT-CARRIER TRANSPORT IN SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS
    HERBERT, DC
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) : 44 - 50
  • [3] Impact ionisation and noise in SiGe multiquantum well structures
    Herbert, DC
    Williams, CJ
    Jaros, M
    [J]. ELECTRONICS LETTERS, 1996, 32 (17) : 1616 - 1618
  • [4] BREAKDOWN VOLTAGE IN ULTRA-THIN PIN DIODES
    HERBERT, DC
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (11) : 1993 - 1998
  • [5] Noise characteristics of thin multiplication region GaAs avalanche photodiodes
    Hu, C
    Anselm, KA
    Streetman, BG
    Campbell, JC
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (24) : 3734 - 3736
  • [6] DISTRIBUTION OF GAINS IN UNIFORMLY MULTIPLYING AVALANCHE PHOTODIODES - THEORY
    MCINTYRE, RJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 703 - &
  • [7] Investigation of impact ionization in thin GaAs diodes
    Plimmer, SA
    David, JPR
    Herbert, DC
    Lee, TW
    Rees, GJ
    Houston, PA
    Grey, R
    Robson, PN
    Higgs, AW
    Wight, DR
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (07) : 1066 - 1072
  • [8] THEORY OF CARRIER MULTIPLICATION AND NOISE IN AVALANCHE DEVICES .2. 2-CARRIER PROCESSES
    VANVLIET, KM
    FRIEDMANN, A
    RUCKER, LM
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (05) : 752 - 764
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