Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

被引：11

作者：

Kanaya, Hidetoshi ^{[1
]}

Suzuki, Safumi ^{[1
]}

Asadaa, Masahiro ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528552, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 18期

基金：

日本科学技术振兴机构;

关键词：

terahertz oscillators; resonant tunneling diode; slot antenna; terahertz integrated circuits; electron dwell time; quantum well; DATA-TRANSMISSION; CASCADE LASERS; GHZ; TECHNOLOGY; FUTURE;

D O I：

10.1587/elex.10.20130501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Terahertz oscillators using AlAs/InGaAs resonant tunneling diodes with deep and thin quantum wells are reported. Although a thin well has been shown to be effective for high-frequency oscillation until now due to a reduced electron dwell time, it caused an increase in bias voltage. We introduce a deep well with indium-rich InGaAs to maintain or even to reduce the bias voltage. Current-voltage and oscillation characteristics are compared between the quantum wells with 3.5-nm-thick In0.8Ga0.2As and 3-nm-thick In0.9Ga0.1As. The highest oscillation frequency was 0.96 THz for the former while 1.27 THz for the latter without increase in bias voltage.

引用

页数：7

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