Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors

被引：0

作者：

Jang, Won Douk ^{[1
]}

Yoon, Young Jun ^{[1
]}

Cho, Min Su ^{[1
]}

Kim, Bo Gyeong ^{[1
]}

Kang, In Man ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2019年 / 19卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Reliability; InGaAs; GAA; TFET; Interface-Trap; III-V Semiconductors; TCAD; CHARGE; CMOS; FET;

D O I：

10.1166/jnn.2019.17009

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effect of interface traps on InGaAs-based vertical gate-all-around (GAA) tunneling field-effect transistors (TFETs) has been investigated using technology computer-aided design (TCAD) simulation. The interface traps distributed within different energy levels (E-t) in the energy bandgap of a semiconductor material exhibit various influences on the device performances. In this work, InGaAs-based TFETs are simulated to analyze the effects on the on-state current (I-on), off-state current (I-off), threshold voltage (V-th), subthreshold swing (SS), and the ambipolar characteristics according to E-t and type of the interface traps. We have confirmed that I-off and SS are degraded by the interface traps. Further, it can be shown that I-on is mainly affected by the acceptor-like traps and ambipolar behavior is affected by the donor-like traps. All the effects increase as E-t becomes closer to the midgap. The effects of the interface traps with gate underlap and overlap at the source-channel region also have been investigated, considering the device fabrication. Additionally, the analysis of the effect of junction trap created at the source-channel junction has been performed.

引用

页码：6036 / 6042

页数：7

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