Si crystal thermal conductance in the THz frequency range by molecular dynamics

被引：1

作者：

Volz, S

Perrin, B

机构：

[1] ENSMA, UMR CNRS 6608, Lab Atude Therm, F-86961 Futuroscope, France

[2] Univ Paris 06, LMDH, UMR 7603, CNRS, F-75252 Paris 05, France

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 316卷

关键词：

THz phonons; molecular dynamics;

D O I：

10.1016/S0921-4526(02)00487-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

No simple theoretical approach is able to provide the thermal behavior at heat carriers frequencies since individual phonon modes are excited. We propose to use the molecular dynamics technique to directly compute a thermal admittance derived from the time autocorrelation of the equilibrium heat flux fluctuations. Results show that individual phonon eigen-modes are excited and the corresponding thermal conductance is four times smaller compared to the one observed at lower frequencies. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：286 / 288

页数：3

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