InAs-based interband cascade lasers near 6 μm

被引：31

作者：

Tian, Z. ^{[1
]}

Yang, R. Q. ^{[1
]}

Mishima, T. D. ^{[2
]}

Santos, M. B. ^{[2
]}

Hinkey, R. T. ^{[2
]}

Curtis, M. E. ^{[2
]}

Johnson, M. B. ^{[2
]}

机构：

[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

[2] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, Norman, OK 73019 USA

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 01期

关键词：

THERMOELECTRIC COOLER TEMPERATURES;

D O I：

10.1049/el:20092779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad-area interband cascade lasers have been demonstrated on an InAs substrate and at emission wavelengths near 6 mm at temperatures up to 150 K in continuous-wave mode. The emission wavelengths are the longest achieved among III-V interband diode lasers. The threshold current density and voltage are about 50 A/cm(2) and 2.4 V, respectively, at 82 K.

引用

页码：48 / 49

页数：2

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