Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

被引：6

作者：

Useinov, A. ^{[1
]}

Saeed, Y. ^{[2
]}

Singh, N. ^{[2
]}

Useinov, N. ^{[3
]}

Schwingenschloegl, U. ^{[2
]}

机构：

[1] Calif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA

[2] King Abdullah Univ Sci & Technol, PSE Div, Thuwal 23955, Saudi Arabia

[3] Kazan Fed Univ, Dept Solid State Phys, Kazan, Russia

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 06期

关键词：

FILMS; IRON;

D O I：

10.1103/PhysRevB.88.060405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

引用

页数：5

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