Low Voltage Graphene FET Based Pressure Sensor

被引：0

作者：

Yogeswaran, Nivasan ^{[1
]}

Gupta, Shoubhik ^{[1
]}

Dahiya, Ravinder ^{[1
]}

机构：

[1] Univ Glasgow, Bendable Elect & Sensing Technol BEST Grp, Glasgow G12 8QQ, Lanark, Scotland

来源：

2018 IEEE SENSORS | 2018年

关键词：

Aluminum Nitride; Extended Gate; GFET; Tactile sensor; Solid-State Sensor; FIELD-EFFECT TRANSISTOR; LARGE-AREA; ARTIFICIAL SKIN; TRANSPARENT; MATRIX;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low voltage graphene field effect transistor (GFET) based pressure sensor. The sensor comprises of GFET connected with a piezoelectric Aluminium Nitride (AlN) capacitor in an extended gate configuration. In this configuration, the piezopotential generated across the AlN capacitor, as a result of applied pressure, appears at the gate terminal of GFET and modulates the channel current. The sensor operates at a remarkably low voltage (100mV) and exhibits a sensitivity of about 7.18x 10(-3) Pa-1 for a pressure range of 3.25-9.74 kPa. These values make the developed GFET sensor suitable for tactile skin in robotics and prosthetics and for wearable health monitoring devices.

引用

页码：582 / 585

页数：4

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