Study of poly(3-hexylthiophene)/cross-linked poly(vinyl alcohol) as semiconductor/insulator for application in low voltage organic field effect transistors

被引：34

作者：

Benvenho, Adriano R. V. ^{[1
]}

Machado, Wagner S. ^{[2
,3
]}

Cruz-Cruz, Isidro ^{[2
]}

Huemmelgen, Ivo A. ^{[2
]}

机构：

[1] Univ Fed ABC, Ctr Ciencias Nat & Humanas, BR-09210170 Santo Andre, SP, Brazil

[2] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil

[3] Univ Fed Sao Joao del Rei, Dept Ciencias Nat, BR-36301160 Sao Joao Del Rei, MG, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 21期

基金：

巴西圣保罗研究基金会;

关键词：

THIN-FILM TRANSISTORS; ELECTRICAL CHARACTERIZATION; CROSS-LINKING; HIGH-MOBILITY; PERFORMANCE; POLYMER; DERIVATIVES; INSULATOR;

D O I：

10.1063/1.4809285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we study the cross-linked poly(vinyl alcohol)/poly(3-hexylthiophene) interfacial properties of an organic field effect transistor. We use cross-linked poly(vinyl alcohol) prepared with different ammonium dichromate: poly(vinyl alcohol) proportions, ranging from 0% to 35%, as insulator. Using admittance spectroscopy, we show that the interfacial properties change when the ammonium dichromate concentration is altered. The interfacial properties and the better insulation are responsible for the improvement of the device performance in these organic field effect transistors, achieving best performance in the blend with ammonium dichromate: poly(vinyl alcohol) proportion of 0.25:1. (C) 2013 AIP Publishing LLC.

引用

页数：8

共 40 条

[21] Low-voltage, high-performance organic field-effect transistors with an ultra-thin TiO2 layer as gate insulator [J].

Majewski, LA ;

Schroeder, R ;

Grell, M .

ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (06) :1017-1022

[22] PRIMARY PHOTOPROCESSES OF CR(VI) IN REAL-TIME HOLOGRAPHIC RECORDING MATERIAL - DICHROMATED POLY(VINYL ALCOHOL) [J].

MANIVANNAN, G ;

CHANGKAKOTI, R ;

LESSARD, RA ;

MAILHOT, G ;

BOLTE, M .

JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (28) :7228-7233

[23] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[24] Analysis of the hysteresis in organic thin-film transistors with polymeric gate dielectric [J].

Orgiu, Emanuele ;

Locci, Simone ;

Fraboni, Beatrice ;

Scavetta, Erika ;

Lugli, Paolo ;

Bonfiglio, Annalisa .

ORGANIC ELECTRONICS, 2011, 12 (03) :477-485

[25] All-organic thin-film transistors made of poly(3-butylthiophene) semiconducting and various polymeric insulating layers [J].

Parashkov, R ;

Becker, E ;

Ginev, G ;

Riedl, T ;

Johannes, HH ;

Kowalsky, W .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) :1594-1596

[26]

Petty M.C., 2007, MOL ELECT

[27] Organic smart pixels and complementary inverter circuits formed on plastic substrates by casting and rubber stamping [J].

Rogers, JA ;

Bao, ZN ;

Dodabalapur, A ;

Makhija, A .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (03) :100-103

[28]

Severt B., 1994, CHEM MATER, V6, P1809

[29] High-performance ambipolar pentacene organic field-effect transistors on poly(vinyl alcohol) organic gate dielectric [J].

Singh, TB ;

Meghdadi, T ;

Günes, S ;

Marjanovic, N ;

Horowitz, G ;

Lang, P ;

Bauer, S ;

Sariciftci, NS .

ADVANCED MATERIALS, 2005, 17 (19) :2315-+

[30]

Stallinga P., 2009, ELECT CHARACTERIZATI

← 1 2 3 4 →