Disorder and the Urbach edge in dilute bismide GaAsBi

被引：43

作者：

Gogineni, Chaturvedi ^{[1
,2
]}

Riordan, Nathaniel A. ^{[1
,2
]}

Johnson, Shane R. ^{[1
,2
]}

Lu, Xianfeng ^{[1
,2
,3
]}

Tiedje, Tom ^{[3
,4
]}

机构：

[1] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA

[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[3] Univ British Columbia, Adv Mat & Proc Engn Lab, Dept Phys & Astron, Vancouver, BC V6T 1Z4, Canada

[4] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 04期

基金：

美国国家科学基金会; 加拿大自然科学与工程研究理事会;

关键词：

OPTICAL-ABSORPTION EDGE; MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; SURFACTANT; GROWTH; PHOTOLUMINESCENCE; GAAS1-XBIX; MBE; BI;

D O I：

10.1063/1.4816435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristic emission from tail states below the bandgap of GaAsBi/GaAs quantum wells is studied using photoluminescence spectroscopy over a 10-300K temperature range and a 0.1-1000mW pump power range. The tail states exhibit two characteristic energies: A deeper one that is temperature independent at 29meV and one nearer to bandgap that is temperature dependent, broadening from 17meV at 10K-29meV at room temperature. The tail states are thought to originate from localization of the Bi states and disorder effects due to alloy fluctuations and clustering on the group-V sublattice. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816435]

引用

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