Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

被引：286

作者：

Sasaki, Kohei ^{[1
,2
]}

Higashiwaki, Masataka ^{[2
]}

Kuramata, Akito ^{[1
]}

Masui, Takekazu ^{[3
]}

Yamakoshi, Shigenobu ^{[1
]}

机构：

[1] Tamura Corp, Sayama, Saitama 3501328, Japan

[2] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[3] Koha Co Ltd, Tokyo 1760022, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 08期

关键词：

SINGLE-CRYSTALS; ACTIVATION; EDGE;

D O I：

10.7567/APEX.6.086502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a donor doping technique for beta-Ga2O3 by using Si-ion (Si+) implantation. For the implanted Ga2O3 substrates with Si+ = 1 x 10(19) -5 x 10(19) cm(-3), a high activation efficiency of above 60% was obtained after annealing in a nitrogen gas atmosphere at a relatively low temperature of 900-1000 degrees C. Annealed Ti/Au electrodes fabricated on the implanted Ga2O3 layers showed ohmic behavior. The Ga2O3 with Si+ = 5 x 10(19) cm(-3) showed the lowest specific contact resistance and resistivity obtained in this work of 4.6 x 10(-6) Omega.cm(2) and 1.4m Omega.cm, respectively. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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