Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy

被引：7
作者：
Ishizaka, Fumiya [1 ,2 ]
Ikejiri, Keitaro [1 ,2 ]
Tomioka, Katsuhiro [1 ,2 ,3 ]
Fukui, Takashi [1 ,2 ]
机构：
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
[3] Japan Sci & Technol Agcy PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期
关键词：
CATALYST-FREE GROWTH; GAAS NANOWIRES; HIGHLY UNIFORM; SILICON;
D O I：
10.7567/JJAP.52.04CH05
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We studied the growth of indium-rich InGaP nanowires (NWs) on InP (111)A substrates by selective-area metal organic vapor phase epitaxy (SA-MOVPE). We obtained vertically aligned InGaP NWs by optimizing growth conditions, such as group III supply ratio and V/III ratio. We found that the height, diameter, shape, and composition of InGaP NWs depended significantly on the supply ratios of trimethylgallium (TMGa) and trimethylindium (TMIn). As the supply ratio of TMGa was increased, the lateral growth was drastically enhanced, and the uniformity of NWs deteriorated. Furthermore, the sidewall facets of NWs changed from {(2) over bar 11} to {(1) over bar 10} as the supply ratio of TMGa was increased, indicating the possibility of structural transition from wurtzite (WZ) to zinc blende (ZB). We propose a possible growth model for such lateral growth, uniformity, and structural transition. Photoluminescence (PL) measurements revealed that the Ga compositions ranged approximately from 0 to 15%. Our results show that highly uniform InGaP NWs can be grown by controlling the growth conditions. (C) 2013 The Japan Society of Applied Physics
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页数：4
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