Low power frequency dividers in SiGe:C BiCMOS technology

This paper reports a 71 GHz static and a 103 GM regenerative dynamic frequency divider fabricated in 0.25 mu m SiGe:C HBT technology with f(T)/f(max) 200 GHz. The static divider including the buffer works with a 3.5 V single supply voltage and consumes 140 mW with 42 mW for the master-slave flip-flop (FF). The high speed/power ratio makes it attractive for high-frequency wireless communication systems. The dynamic frequency divider operates from 24 GHz to 103 GHz with 5.2 V voltage supply and consumes 195 mW including the buffer with 41 mW for the divider core, and it can be applied at higher frequencies in low power millimeter wave systems.