Saturation Current and On-Resistance Correlation during During Repetitive Short-Circuit Conditions on SiC JFET Transistors

被引：15
作者：
Berkani, M. [1 ]
Lefebvre, S. [1 ]
Khatir, Z. [2 ]
机构：
[1] CNRS, F-94235 Cachan, France
[2] French Inst Sci & Technol Transport Dev & Network, Inst Sci & Technol Transport, Planning & Networks Lab New Technol, F-78008 Versailles, France
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2013年 / 28卷 / 02期
关键词：
Ageing; current limiter; junction gate field-effect transistors (JFETs); short circuit; silicon carbide; METALLIZATION; DEVICES;
D O I：
10.1109/TPEL.2012.2215629
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a correlation between the reduction of the saturation current level and increase of on-state resistance and the top-metal ageing of normally ON SiC junction gate field effecttransistors. For this study, ageing has been obtained using repetitive short-circuit operations. Among monitored parameters during ageing, on-state resistance and short-circuit current level are those, which have the strongest evolution. The top-metal degradation has been characterized via the on-state resistance measurement during ageing. In particular, we clearly show that the top-metal restructuration due to ageing leads to an additional voltage drop between gate and source terminals and results to a lower gate-source junction voltage.
引用
收藏
页码：621 / 624
页数：4
相关论文
共 15 条
[1]  
Arab M., 2008, P POW EL SPEC C
[2]   Ageing of SiC JFET transistors under repetitive current limitation conditions [J].
Bouarroudj-Berkani, M. ;
Othman, D. ;
Lefebvre, S. ;
Moumen, S. ;
Khatir, Z. ;
Ben Sallah, T. .
MICROELECTRONICS RELIABILITY, 2010, 50 (9-11) :1532-1537
[3]   Robustness of SiC JFET in Short-Circuit Modes [J].
Boughrara, Narjes ;
Moumen, Sabrine ;
Lefebvre, Stephane ;
Khatir, Zoubir ;
Friedrichs, Peter ;
Faugieres, Jean-Claude .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (01) :51-53
[4]   Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions [J].
Detzel, T ;
Glavanovics, M ;
Weber, K .
MICROELECTRONICS RELIABILITY, 2004, 44 (9-11) :1485-1490
[5]   Silicon Carbide power devices - Status and upcoming challenges [J].
Friedrichs, Peter .
2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10, 2007, :1-11
[6]   Power conversion with SiC devices at extremely high ambient temperatures [J].
Funaki, Tsuyoshi ;
Balda, Juan Carlos ;
Junghans, Jeremy ;
Kashyap, Avinash S. ;
Mantooth, H. Alan ;
Barlow, Fred ;
Kimoto, Tsunenobu ;
Hikihara, Takashi .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2007, 22 (04) :1321-1329
[7]  
Garuda VR, 1998, IEEE POWER ELECTRON, P1561, DOI 10.1109/PESC.1998.703385
[8]   Intelligent, Compact and Robust Semiconductor Circuit Breaker Based on Silicon Carbide Devices [J].
Handt, K. ;
Griepentrog, G. ;
Maier, R. .
2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, 2008, :1586-1591
[9]   Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors [J].
Huque, M. A. ;
Tolbert, L. M. ;
Blalock, B. J. ;
Islam, S. K. .
IET POWER ELECTRONICS, 2010, 3 (06) :1001-1009
[10]   Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions [J].
Lefebvre, S ;
Khatir, Z ;
Saint-Eve, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (02) :276-283
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