Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

被引：186

作者：

Morita, K. ^{[1
]}

Inomata, Y. ^{[1
]}

Suemasu, T. ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

THIN SOLID FILMS | 2006年 / 508卷 / 1-2期

关键词：

BaSi2; molecular beam epitaxy; optical absorption; mobility;

D O I：

10.1016/j.tsf.2005.07.344

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties and optical absorption (OA) spectra of undoped BaSi2 films grown by molecular beam epitaxy were investigated The electron density and mobility of BaSi2 grown epitaxially on Si(111) were 5 x 10(15) cm(-3) and 820 cm(2)/V(.)s at room temperature, respectively. The conduction-band discontinuity at the BaSi2/Si heterejunction was estimated to be 0.7 eV from the current-voltage characteristics of n-BaSi2/n-Si isotype diodes. OA spectra were measured on polycrystalline BaSi2 films grown on transparent fused silica substrates with predeposited polycrystalline Si layer. The indirect absorption edge was derived to be 1.3 eV, and the optical absorption coefficient reached 10(5) cm(-1) at 1.5 eV. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：363 / 366

页数：4

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