Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition

被引：40

作者：

Zhong, De-Yao ^{[1
]}

Li, Jun ^{[1
]}

Zhao, Cheng-Yu ^{[1
]}

Huang, Chuan-Xin ^{[1
]}

Zhang, Jian-Hua ^{[2
]}

Li, Xi-Feng ^{[2
]}

Jiang, Xue-Yin ^{[1
]}

Zhang, Zhi-Lin ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China

[2] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 02期

关键词：

B doping concentration; boron-doped indium-zinc-oxide (BIZO) thin-film transistors (TFTs); negative bias illumination stress (NBIS) stability; solution process; GATE BIAS; TFTS;

D O I：

10.1109/TED.2017.2779743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, boron-doped indium-zinc-oxide (InZnO) thin-film transistors (BIZO TFTs) were fabricated by solution process. The electrical performance and stability under the negative bias illumination stress (NBIS) have been greatly improved by B doping. The BIZO TFT with 5 mol.% B doping ratio shows a superior electrical performance with a field-effect mobility of 10.15 cm(2)/V . s, a threshold voltage of 3.29 V, a subthreshold swing of 0.35 V/decade, and an ON/OFF ratio of 10(8). Furthermore, the 5 mol.% BIZO TFT shows only a-1.59V shift of the threshold voltage, compared with a large negative shift of -4.24 V for pure IZO TFTs. The enhancement of electrical performance and stability under NBIS is due to the reduction of oxygen vacancies, which are suppressed by B doping. The density of states is calculated to further validate the improved electrical performance and NBIS stability of BIZO TFTs.

引用

页码：520 / 525

页数：6

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