60GHz-band high-gain MMIC cascode HBT amplifier

被引：2

作者：

Tanaka, H ^{[1
]}

Suematsu, E ^{[1
]}

Handa, S ^{[1
]}

Motouchi, Y ^{[1
]}

Takahashi, N ^{[1
]}

Yamada, A ^{[1
]}

Matsumoto, N ^{[1
]}

Sato, H ^{[1
]}

机构：

[1] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan

来源：

GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001 | 2001年

关键词：

D O I：

10.1109/GAAS.2001.964351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm x 1.3mm size shows a gain of 20dB in the 60GHz-band.

引用

页码：79 / 82

页数：4