Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode

被引：25
作者：
Ghosh, S [1 ]
Bhattacharya, P [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 04期
关键词：
D O I：
10.1063/1.1436526
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the properties of a spin-polarized In0.4Ga0.6As/GaAs quantum-dot surface-light-emitting diode with a Ga0.974Mn0.026As spin injector layer. Spin-polarized holes from this ferromagnetic layer recombine with electrons in the quantum dots to produce circularly polarized light output. The peak optical polarization efficiency at 5.1 K is 18% and the spin injection efficiency is estimated to be similar to36%. The temperature dependence of spin injection is almost identical to the temperature dependence of magnetization in the (Ga, Mn)As layer. (C) 2002 American Institute of Physics.
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页码：658 / 660
页数：3
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