Fabrication of Cu2ZnSnSe4 solar cells through multi-step selenization of layered metallic precursor film

被引：10

作者：

Chen, Wei-Chao ^{[1
,2
,3
,6
,7
]}

Tunuguntla, Venkatesh ^{[1
,3
,4
]}

Li, Hsien-Wen ^{[5
]}

Chen, Cheng-Ying ^{[1
,3
]}

Li, Shao-Sian ^{[8
]}

Hwang, Jih-Shang ^{[5
]}

Lee, Chin-Hao ^{[2
]}

Chen, Li-Chyong ^{[3
]}

Chen, Kuei-Hsien ^{[1
]}

机构：

[1] Acad Sinica, Inst Atom & Mol Sci, 1,Sec 4,Roosevelt Rd, Taipei, Taiwan

[2] Natl Tsing Hua Univ, Dept Engn & Syst Sci, 101,Sec 2,Kuang Fu Rd, Hsinchu, Taiwan

[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, 1,Sec 4,Roosevelt Rd, Taipei, Taiwan

[4] Natl Tsing Hua Univ, Dept Chem, 101,Sec 2,Kuang Fu Rd, Hsinchu, Taiwan

[5] Natl Taiwan Ocean Univ, Inst Optoeletron Sci, 2 Pei Ning Rd, Keelung, Taiwan

[6] Acad Sinica, Taiwan Int Grad Program, Nano Sci & Technol Program, Hsinchu 30012, Taiwan

[7] Natl Tsing Hua Univ, Hsinchu 30012, Taiwan

[8] Natl Taiwan Univ, Dept Mat Sci & Engn, 1,Sec 4,Roosevelt Rd, Taipei, Taiwan

来源：

THIN SOLID FILMS | 2016年 / 618卷

关键词：

Kesterite structure; CZrSe; Selenization; Thin film solar cell; HIGH-EFFICIENCY; THIN-FILM;

D O I：

10.1016/j.tsf.2016.03.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we proposed a 4-step selenization process for the RF-sputtered Cu-Zn/Sn metallic stack to prepare Cu2ZnSnSe4 (CZTSe) absorber. We applied a pre-heating treatment for the metal stack under vacuum prior to the selenization, which plays an important role to form a well inter mixed alloy with relatively smooth:thin film morphology. The nucleation temperatures were controlled precisely from 150 degrees C to 500 degrees C during 4-step selenization to avoid the formation of secondary phases and to improve the crystal quality of CZTSe with a greater homogeneity in the composition. The formation of various phases during each step in 4-step selenization process were studied by X-ray Diffraction, Raman analysis and we proposed a possible reaction mechanism of the CZTSe formation with binary and ternary compounds as intermediates. We also, performed optical analysis, including Uv-Visible absorption and low temperature photoluminescence, and scanning transmission electron microscope analysis for the CZTSe samples. Finally, an efficiency of 5.8% CZTSe solar cell is fabricated with an open circuit voltage of 370 mV, short circuit current of 31.99 rnA/cm(2), and a fill factor of 48.3%. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：42 / 49

页数：8

共 21 条

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