2-million-pixel SOI diode uncooled IRFPA with 15 μm pixel pitch

被引:32
作者
Fujisawa, Daisuke [1 ]
Maegawa, Tomohiro [1 ]
Ohta, Yasuaki [1 ]
Kosasayama, Yasuhiro [1 ]
Ohnakado, Takahiro [1 ]
Hata, Hisatoshi [1 ]
Ueno, Masashi [1 ]
Ohji, Hiroshi [1 ]
Sato, Ryota [2 ]
Katayama, Haruyoshi [2 ]
Imai, Tadashi [2 ]
Ueno, Munetaka [2 ]
机构
[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan
[2] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan
来源
INFRARED TECHNOLOGY AND APPLICATIONS XXXVIII, PTS 1 AND 2 | 2012年 / 8353卷
关键词
uncooled IRFPA; SOI diode; large format; stitching;
D O I
10.1117/12.919520
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the development of a 2-million-pixel, that is, a 2000 x 1000 array format, SOI diode uncooled IRFPA with 15 mu m pixel pitch. The combination of the shrinkable 2-in-1 SOI diode pixel technology, which we proposed last year [1], and the uncooled IRFPA stitching technology has successfully achieved a 2-million-pixel array format. The chip size is 40.30 mm x 24.75 mm. Ten-series diodes are arranged in a 15 mu m pixel. In spite of the increase to 2-million-pixels, a frame rate of 30 Hz, which is the same frame rate as our former generation (25 mu m pixel pitch) VGA IRFPA, can be supported by the adoption of readout circuits with four outputs. NETDs are designed to be 60 mK (f/1.0, 15 Hz) and 84 mK (f/1.0, 30 Hz), respectively and a tau(th) is designed to be 12 msec. We performed the fabrication of the 2-million-pixel SOI diode uncooled IRFPAs with 15 mu m pixel pitch, and confirmed favorable diode pixel characteristics and IRFPA operation where the evaluated NETD and tau(th) were 65 mK (f/1.0, 15 Hz) and 12 msec, respectively.
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页数:13
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