Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature

被引：112

作者：

Bhattacharya, P ^{[1
]}

Ghosh, S ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 19期

关键词：

D O I：

10.1063/1.1478129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By utilizing tunnel injection of electrons, first demonstrated in quantum well lasers, we have measured enhanced small-signal modulation bandwidth, f(-3dB), and reduced temperature sensitivity of the threshold current, characterized by T-0, in In0.4Ga0.6As/GaAs self-organized quantum dot ridge waveguide lasers. Values of f(-3dB)=15 GHz at 283 K and T-0=237 K for 318greater than or equal toTgreater than or equal to278 are measured in these devices. The differential gain at 283 K is dg/dncongruent to8.5x10(-14) cm(2) and the gain compression factor epsilon=4.5x10(-17) cm(3). (C) 2002 American Institute of Physics.

引用

页码：3482 / 3484

页数：3

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