An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

被引：23

作者：

Chandrasekar, Hareesh ^{[1
]}

Mohan, Nagaboopathy ^{[2
]}

Bardhan, Abheek ^{[1
]}

Bhat, K. N. ^{[1
]}

Bhat, Navakanta ^{[1
,3
]}

Ravishankar, N. ^{[2
]}

Raghavan, Srinivasan ^{[1
,2
]}

机构：

[1] Indian Inst Sci, Ctr Nano Sci & Engn, Bangalore 560012, Karnataka, India

[2] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

[3] Indian Inst Sci, Dept Elect Commun Engn, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 21期

关键词：

CHEMICAL-VAPOR-DEPOSITION; INTERMEDIATE LAYER; EPITAXIAL-GROWTH; SILICON EPITAXY; BUFFER LAYER; GAN; SI(111); OPTIMIZATION; TENSILE; SURFACE;

D O I：

10.1063/1.4831968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The integration of Metal Organic Chemical Vapor Deposition (MOCVD) grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus > 1GPa), and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface, and crystal quality. (C) 2013 AIP Publishing LLC.

引用

页数：4

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