Rietveld analysis of CdS/CdTe thin film junctions submitted to a CdCl2 heat treatment

被引：7
|
作者：
Antolin, G. D. C. [1 ]
Dhere, R. G. [2 ]
de Avillez, R. R. [3 ]
Cruz, L. R. [1 ]
机构：
[1] Inst Mil Engn, BR-22290270 Rio De Janeiro, RJ, Brazil
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
[3] Pontificia Univ Catolica Rio de Janeiro, BR-22451900 Rio De Janeiro, RJ, Brazil
来源：
THIN SOLID FILMS | 2013年 / 539卷
关键词：
Cadmium telluride; Cadmium chloride; Rietveld analysis; Heat treatment; Chemical treatment; PREFERRED ORIENTATION; CDTE; DIFFUSION;
D O I：
10.1016/j.tsf.2013.05.048
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work we investigate the effects of a CdCl2 heat treatment on the interface of CdTe/CdS heterojunction solar cells using Rietveld analysis of X-ray diffraction patterns. Although the Rietveld method is an important tool for the study of materials by X-ray diffraction, there have been few reports of its use in thin film analysis. The results showed the occurrence of interdiffusion in the CdS-CdTe boundary, with substitution of tellurium by sulfur in the CdTe lattice that resulted in a CdSxTe1-x alloy. The sulfur content of the alloy was greater than in previous studies. This is attributed to the low oxygen concentration during processing and the strong (111) texture of the CdTe films. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：356 / 359
页数：4
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