Direct observation of Si-related and Ge-related ring clusters on Si(111)-(7 x 7) surface

被引：3
|
作者：
Yan, L
Zhang, YP
Peng, YP
Gao, HJ
Xie, SS
Pang, SJ
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Lab Vacuum Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
VACUUM | 2002年 / 65卷 / 02期
关键词：
scanning tunnelling microscopy; Si(111)-(7 x 7); ring clusters;
D O I：
10.1016/S0042-207X(01)00483-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In a scanning tunnelling microscope (STM) study of Si(1 1 1)-(7 x 7) surfaces, we observed the Si-related ring cluster and one new type of Ge-related ring cluster, For both clusters there is an electron transfer between them and the nearby Si centre atoms and their local density of states near the Fermi level is obviously reduced. Moreover, by differences in their electron transfer, the Si-related ring cluster and Ge-related ring cluster can be easily distinguished from each other. (C) 2002 Published by Elsevier Science Ltd.
引用
收藏
页码：207 / 211
页数：5
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