Adiabatic optical entanglement between electron spins in separate quantum dots

被引:10
|
作者
Saikin, S. K. [1 ,2 ]
Emary, C. [3 ]
Steel, D. G. [4 ]
Sham, L. J. [1 ]
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] Kazan VI Lenin State Univ, Dept Phys, Kazan 420008, Russia
[3] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany
[4] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
关键词
excited states; gallium arsenide; III-V semiconductors; indium compounds; localised states; quantum entanglement; quantum optics; semiconductor quantum dots;
D O I
10.1103/PhysRevB.78.235314
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an adiabatic approach to the design of entangling quantum operations with two electron spins localized in separate InAs/GaAs quantum dots via the Coulomb interaction between optically excited localized states. Slowly varying optical pulses minimize the pulse noise and the relaxation of the excited states. An analytical "dressed-state" solution gives a clear physical picture of the entangling process and a numerical solution is used to investigate the error dynamics. For two vertically stacked quantum dots we show that, for a broad range of dot parameters, a two-spin state with concurrence C>0.85 can be obtained by four optical pulses with durations similar to 0.1-1 ns.
引用
收藏
页数:7
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