Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer

被引：20

作者：

Kwoen, Jinkwan ^{[1
]}

Lee, Joohang ^{[2
]}

Watanabe, Katsuyuki ^{[1
]}

Arakawa, Yasuhiko ^{[1
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SB期

关键词：

NEXT-GENERATION; SI(100); LASERS; PHOTONICS;

D O I：

10.7567/1347-4065/aaffc2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The direct growth of a III-V compound semiconductor on Si(001) is an unsolved problem for monolithically integrated photonic devices on the Si platform. Here, we report the growth of a high-quality GaAs layer on on-axis Si(001) substrates by MBE. A single domain GaAs layer was grown on top of a AlGaAs nucleation layer on a Si(001) substrate. By optimizing the Al content of the nucleation layer, anti-phase domains were self-eliminated at the GaAs layer. This result represents a key step towards the realization of monolithically integration of III-V devices on the Si platform using direct epitaxial growth. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

共 22 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
AKIYAMA, M
KAWARADA, Y
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845
[2] Alcotte R., 2016, APL MATER, V4, P4
[3] Silicon Photonics for Next Generation System Integration Platform
Arakawa, Yasuhiko
Nakamura, Takahiro
Urino, Yutaka
Fujita, Tomoyuki
[J]. IEEE COMMUNICATIONS MAGAZINE, 2013, 51 (03) : 72 - 77
[4] Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip
Atabaki, Amir H.
Moazeni, Sajjad
Pavanello, Fabio
Gevorgyan, Hayk
Notaros, Jelena
Alloatti, Luca
Wade, Mark T.
Sun, Chen
Kruger, Seth A.
Meng, Huaiyu
Al Qubaisi, Kenaish
Wang, Imbert
Zhang, Bohan
Khilo, Anatol
Baiocco, Christopher V.
Popovic, Milos A.
Stojanovic, Vladimir M.
Ram, Rajeev J.
[J]. NATURE, 2018, 556 (7701) : 349 - +
[5] GaAs epitaxy on Si substrates: modern status of research and engineering
Bolkhovityanov, Yu B.
Pchelyakov, O. P.
[J]. PHYSICS-USPEKHI, 2008, 51 (05) : 437 - 456
[6] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS
BRINGANS, RD
UHRBERG, RIG
OLMSTEAD, MA
BACHRACH, RZ
[J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450
[7] Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient
Brueckner, Sebastian
Kleinschmidt, Peter
Supplie, Oliver
Doescher, Henning
Hannappel, Thomas
[J]. NEW JOURNAL OF PHYSICS, 2013, 15
[8] Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/nphoton.2016.21, 10.1038/NPHOTON.2016.21]
[9] SELF-ANNIHILATION OF ANTIPHASE BOUNDARY IN GAAS ON SI(100) GROWN BY MOLECULAR-BEAM EPITAXY
KAWABE, M
UEDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L944 - L946
[10] Kwoen J., 2018, SSDM2018

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