High-Performance Photodetector based on a 3D Dirac Semimetal Cd3As2/Tungsten Disulfide (WS2) van der Waals Heterojunction

被引：11

作者：

Zhang, Xingchao ^{[1
]}

Pan, Rui ^{[1
]}

Yang, Yunkun ^{[3
,4
]}

Han, Qi ^{[1
]}

Liu, Xianchao ^{[1
]}

Zhang, Chaoyi ^{[1
]}

Zhou, Hongxi ^{[1
]}

Han, Jiayue ^{[1
]}

Gou, Jun ^{[1
]}

Wang, Jun ^{[1
,2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[4] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

来源：

ADVANCED PHOTONICS RESEARCH | 2021年 / 2卷 / 06期

基金：

中国国家自然科学基金;

关键词：

3D Dirac semimetal; Cd3As2; heterojunction photodetectors; tungsten disulfide; ultra-low dark current; MAGNETOTRANSPORT PROPERTIES; RESPONSIVITY;

D O I：

10.1002/adpr.202000194

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently, heterojunction photodetectors have attracted significant interest due to the multiple degrees of freedom reorganization, integrating advantages of different typed materials. Herein, a high-performance photodetector based on a 3D Dirac semimetal Cd3As2/tungsten disulfide (WS2) heterojunction is demonstrated, which is constructed by directly transferring exfoliated 2D few layer WS2 on Cd3As2 nano-belt and following by annealing treatment. The resulting Cd3As2/WS2 heterojunction device presents superior performance with a high on/off ratio (approximate to 5.3x10(4)) and a responsivity (R-i) of about 223.5AW(-1) at 520nm, as well as an outstanding detectivity (D*) of about 2.05x10(14) Jones at 808nm near-IR waveband. However, the optimized noise equivalent power (NEP) is evaluated about 6.17x10(-14)WHz(-1/2) by the noise power density spectrum. The excellent performance can be attributed to a high-quality heterostructure interface, strong light absorption capacity, and ultralow dark current in a Cd3As2/WS2 heterojunction system. This work provides a promising platform to develop a high-performance optoelectronic device based on 3D Dirac semimetal and 2D TMDs families.

引用

页数：8

共 41 条

[1] Identification of individual and few layers of WS2 using Raman Spectroscopy [J].

Berkdemir, Ayse ;

Gutierrez, Humberto R. ;

Botello-Mendez, Andres R. ;

Perea-Lopez, Nestor ;

Elias, Ana Laura ;

Chia, Chen-Ing ;

Wang, Bei ;

Crespi, Vincent H. ;

Lopez-Urias, Florentino ;

Charlier, Jean-Christophe ;

Terrones, Humberto ;

Terrones, Mauricio .

SCIENTIFIC REPORTS, 2013, 3

[2] A Wide-Range Photosensitive Weyl Semimetal Single Crystal-TaAs [J].

Chi, Shumeng ;

Li, Zhilin ;

Xie, Ying ;

Zhao, Yongguang ;

Wang, Zeyan ;

Li, Lei ;

Yu, Haohai ;

Wang, Gang ;

Weng, Hongming ;

Zhang, Huaijin ;

Wang, Jiyang .

ADVANCED MATERIALS, 2018, 30 (43)

[3] Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd3As2 [J].

Chorsi, Hamid T. ;

Yue, Shengying ;

Iyer, Prasad P. ;

Goyal, Manik ;

Schumann, Timo ;

Stemmer, Susanne ;

Liao, Bolin ;

Schuller, Jon A. .

ADVANCED OPTICAL MATERIALS, 2020, 8 (08)

[4] Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon [J].

Delli, Evangelia ;

Letka, Veronica ;

Hodgson, Peter D. ;

Repiso, Eva ;

Hayton, Jonathan P. ;

Craig, Adam P. ;

Lu, Qi ;

Beanland, Richard ;

Krier, Anthony ;

Marshall, Andrew R. J. ;

Carrington, Peter J. .

ACS PHOTONICS, 2019, 6 (02) :538-544

[5] Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications [J].

Dong, Tao ;

Simoes, Joao ;

Yang, Zhaochu .

ADVANCED MATERIALS INTERFACES, 2020, 7 (04)

[6] Physical Properties of Annealed ZnO Nanowire/CuSCN Heterojunctions for Self-Powered UV Photodetectors [J].

Garnier, Jerome ;

Parize, Romain ;

Appert, Estelle ;

Chaix-Pluchery, Odette ;

Kaminski-Cachopo, Anne ;

Consonni, Vincent .

ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (10) :5820-5829

[7] Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors [J].

Hao, Song ;

Yan, Shengnan ;

Wang, Yang ;

Xu, Tao ;

Zhang, Hui ;

Cong, Xin ;

Li, Lingfei ;

Liu, Xiaowei ;

Cao, Tianjun ;

Gao, Anyuan ;

Zhang, Lili ;

Jia, Lanxin ;

Long, Mingsheng ;

Hu, Weida ;

Wang, Xiaomu ;

Tan, Pingheng ;

Sun, Litao ;

Cui, Xinyi ;

Liang, Shi-Jun ;

Miao, Feng .

SMALL, 2020, 16 (04)

[8] High responsivity and fast UV?vis?short-wavelength IR photodetector based on Cd3As2/MoS2 heterojunction [J].

Huang, Zehua ;

Jiang, Yadong ;

Han, Qi ;

Yang, Ming ;

Han, Jiayue ;

Wang, Fang ;

Luo, Man ;

Li, Qing ;

Zhu, He ;

Liu, Xianchao ;

Gou, Jun ;

Wang, Jun .

NANOTECHNOLOGY, 2020, 31 (06)

[9] All-dry transferred single- and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing [J].

Islam, Arnob ;

Lee, Jaesung ;

Feng, Philip X-L. .

JOURNAL OF APPLIED PHYSICS, 2018, 123 (02)

[10] A versatile photodetector assisted by photovoltaic and bolometric effects [J].

Jiang, Wei ;

Zheng, Tan ;

Wu, Binmin ;

Jiao, Hanxue ;

Wang, Xudong ;

Chen, Yan ;

Zhang, Xiaoyu ;

Peng, Meng ;

Wang, Hailu ;

Lin, Tie ;

Shen, Hong ;

Ge, Jun ;

Hu, Weida ;

Xu, Xiaofeng ;

Meng, Xiangjian ;

Chu, Junhao ;

Wang, Jianlu .

LIGHT-SCIENCE & APPLICATIONS, 2020, 9 (01)

← 1 2 3 4 5 →