A 10-bit 300-MS/s asynchronous SAR ADC with strategy of optimizing settling time for capacitive DAC in 65 nm CMOS

被引:8
作者
Liang, Yuhua [1 ]
Zhu, Zhangming [1 ]
Ding, Ruixue [1 ]
机构
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
基金
中国国家自然科学基金;
关键词
SAR ADC; Low power; High speed; Settling time; Asynchronous;
D O I
10.1016/j.mejo.2015.08.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 10-bit 300-MS/s asynchronous SAR ADC in 65 nm CMOS is presented in this paper. To achieve low power, binary-weighed capacitive DAC is employed without any digital correction or calibration. Consequently, settling time for the capacitive DAC would be a dominant limiting factor for the ADC operating speed. A novel architecture is proposed to optimize the settling time for the capacitive DAC, which depends merely on the on-resistance of switches and the capacitance of unit capacitor and irrelevant to the resolution. Therefore, high-speed high-resolution SAR ADC is possible. What is deserved to highlight is that the architecture improves the ADC performance at a fraction of the cost, with only some capacitors and control logic added. Post-layout simulation has been made for the SAR ADC. At a 1.2-V supply voltage and a sampling rate of 300 MS/s, it consumes 1.27 mW and achieves an SNDR of 60 dB, an SFDR of 67.5 dB, with the Nyquist input. The SAR ADC occupies a core area of 450 x 380 mu m(2). (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:988 / 995
页数:8
相关论文
共 14 条
[1]  
Abbas M., 2010, Solid State Circuits Conference (A-SSCC), P1, DOI DOI 10.1109/ASSCC.2010.5716609
[2]  
Harpe P., 2012, ESSCIRC 2012 - 38th European Solid State Circuits Conference, P373, DOI 10.1109/ESSCIRC.2012.6341363
[3]  
Johns D. A., 2000, ANALOG INTEGRATED CI
[4]  
Jun Ma, 2011, Proceedings of the 2011 IEEE 9th International Conference on ASIC (ASICON 2011), P484, DOI 10.1109/ASICON.2011.6157227
[5]   Current Reference Pre-Charging Techniques for Low-Power Zero-Crossing Pipeline-SAR ADCs [J].
Kuppambatti, Jayanth ;
Kinget, Peter R. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (03) :683-694
[6]  
Lee C.C., 2013, P IEEE INT S VLSI CI, P239
[7]  
Razavi B, 1995, PRINCIPLES DATA CONV, P7
[8]   A 2.3 mW 10-bit 170 MS/s Two-Step Binary-Sarch Assisted Time-Interleaved SAR ADC [J].
Wong, Si-Seng ;
Chio, U-Fat ;
Zhu, Yan ;
Sin, Sai-Weng ;
U, Seng-Pan ;
Martins, Rui Paulo .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (08) :1783-1794
[9]   A 2.8 GS/s 44.6 mW Time-Interleaved ADC Achieving 50.9 dB SNDR and 3 dB Effective Resolution Bandwidth of 1.5 GHz in 65 nm CMOS [J].
Stepanovic, Dusan ;
Nikolic, Borivoje .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (04) :971-982
[10]  
Wang XY, 2014, IEEE INT SYMP CIRC S, P309, DOI 10.1109/ISCAS.2014.6865127