Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

被引：18

作者：

Ruff, M ^{[1
]}

Streb, D ^{[1
]}

Dankowski, SU ^{[1
]}

Tautz, S ^{[1
]}

Kiesel, P ^{[1
]}

Knupfer, B ^{[1
]}

Kneissl, M ^{[1
]}

Linder, N ^{[1
]}

Dohler, GH ^{[1
]}

Keil, UD ^{[1
]}

机构：

[1] MIKROELEKT CTR,DK-2800 LYNGBY,DENMARK

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 21期

关键词：

D O I：

10.1063/1.116371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from the substrate by using an epitaxial liftoff technique. Therefore, we have been able to observe the electro-optic effect at the fundamental band gap as well as at the split-off band edge. The absorption is clearly polarization dependent at the fundamental bandgap but only weakly at the split-off band gap, in agreement with the theory of the Franz-Keldysh effect. (C) 1996 American Institute of Physics.

引用

页码：2968 / 2970

页数：3

共 14 条

[1] ULTRAFAST NANOSCALE METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON BULK AND LOW-TEMPERATURE GROWN GAAS [J].