A novel dual-polarity device with symmetrical/asymmetrical S-Type I-V characteristics for ESD protection design

被引：25

作者：

Salcedo, JA ^{[1
]}

Liou, JJ ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 01期

关键词：

charge-pump ICs; dual-polarity conduction; electrostatic discharge (ESD); S-type I-V characteristics;

D O I：

10.1109/LED.2005.861601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel and compact device with adjustable forward and reverse conductions and symmetrical/asymmetrical I-V characteristics for ESD (electrostatic discharge) applications is presented. The device allows for the dual-polarity conduction with the proper selection of blocking junction configurations. This design enables high-level ESD protections for various mixed-signal integrated circuits operating under a wide range of symmetrical and asymmetrical bias conditions.

引用

页码：65 / 67

页数：3

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