Iron-mediated growth of epitaxial graphene on SiC and diamond

被引：39
作者：
Cooil, S. P. [1 ]
Song, F. [2 ]
Williams, G. T. [1 ]
Roberts, O. R. [1 ]
Langstaff, D. P. [1 ]
Jorgensen, B. [3 ]
Hoydalsvik, K. [2 ]
Breiby, D. W. [2 ]
Wahlstrom, E. [2 ]
Evans, D. A. [1 ]
Wells, J. W. [2 ,4 ]
机构：
[1] Aberystwyth Univ, Inst Math & Phys, Aberystwyth SY23 3BZ, Dyfed, Wales
[2] Norwegian Univ Sci & Technol NTNU, Dept Phys, N-7491 Trondheim, Norway
[3] Aarhus Univ, Dept Phys, DK-8000 Aarhus, Denmark
[4] Lund Univ, MAX Lab 4, S-22100 Lund, Sweden
来源：
CARBON | 2012年 / 50卷 / 14期
基金：
英国工程与自然科学研究理事会;
关键词：
RAY FLUORESCENCE SPECTROSCOPY; SILICON-CARBIDE; SURFACE; CARBON; FE; NI; TEMPERATURE; MORPHOLOGY; INTERFACE; GRAPHITE;
D O I：
10.1016/j.carbon.2012.06.050
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp(3) to sp(2) carbon. In comparison with the bare SiC(0 0 0 1) surface, the graphitization temperature is reduced from over 1000 degrees C to 600 degrees C and for diamond (111), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures. (c) 2012 Elsevier Ltd. All rights reserved.
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收藏
页码：5099 / 5105
页数：7
相关论文
共 31 条
[1]   SOLID-STATE REACTIONS BETWEEN SILICON-CARBIDE AND (FE, NI, CR)-ALLOYS - REACTION PATHS, KINETICS AND MORPHOLOGY [J].
BACKHAUSRICOULT, M .
ACTA METALLURGICA ET MATERIALIA, 1992, 40 :S95-S103
[2]   Observation of Plasmarons in Quasi-Freestanding Doped Graphene [J].
Bostwick, Aaron ;
Speck, Florian ;
Seyller, Thomas ;
Horn, Karsten ;
Polini, Marco ;
Asgari, Reza ;
MacDonald, Allan H. ;
Rotenberg, Eli .
SCIENCE, 2010, 328 (5981) :999-1002
[3]   Quasiparticle Transformation during a Metal-Insulator Transition in Graphene [J].
Bostwick, Aaron ;
McChesney, Jessica L. ;
Emtsev, Konstantin V. ;
Seyller, Thomas ;
Horn, Karsten ;
Kevan, Stephen D. ;
Rotenberg, Eli .
PHYSICAL REVIEW LETTERS, 2009, 103 (05)
[4]   Coherent dynamics of coupled electron and nuclear spin qubits in diamond [J].
Childress, L. ;
Dutt, M. V. Gurudev ;
Taylor, J. M. ;
Zibrov, A. S. ;
Jelezko, F. ;
Wrachtrup, J. ;
Hemmer, P. R. ;
Lukin, M. D. .
SCIENCE, 2006, 314 (5797) :281-285
[5]   Influence of iron-silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition [J].
de los Arcos, T ;
Vonau, F ;
Garnier, MG ;
Thommen, V ;
Boyen, HG ;
Oelhafen, P ;
Düggelin, M ;
Mathis, D ;
Guggenheim, R .
APPLIED PHYSICS LETTERS, 2002, 80 (13) :2383-2385
[6]   Graphene-protected iron layer on Ni(111) [J].
Dedkov, Yu. S. ;
Fonin, M. ;
Ruediger, U. ;
Laubschat, C. .
APPLIED PHYSICS LETTERS, 2008, 93 (02)
[7]   Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy [J].
Evans, D. A. ;
Roberts, O. R. ;
Vearey-Roberts, A. R. ;
Langstaff, D. P. ;
Twitchen, D. J. ;
Schwitters, M. .
APPLIED PHYSICS LETTERS, 2007, 91 (13)
[8]  
EVANS S, 1990, J HARD MATER, V1, P169
[9]   STUDY OF TRANSFORMATION OF DIAMOND TO GRAPHITE [J].
EVANS, T ;
JAMES, PF .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1964, 277 (1368) :260-+
[10]   Multi layer graphene grown by precipitation upon cooling of nickel on diamond [J].
Garcia, Jorge M. ;
He, Rui ;
Jiang, Mason P. ;
Kim, Philip ;
Pfeiffer, Loren N. ;
Pinczuk, Aron .
CARBON, 2011, 49 (03) :1006-1012
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