Structure and properties of lanthanide doped Bi4Ti3O12 films

被引：4

作者：

Garg, A ^{[1
]}

Hu, X

Barber, ZH

机构：

[1] Indian Inst Technol, Dept Mat & Met Engn, Kanpur 208016, Uttar Pradesh, India

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

FERROELECTRICS | 2005年 / 328卷

关键词：

ferroelectrics; thin films; bismuth titanate; sol-gel;

D O I：

10.1080/00150190500311292

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

There has been extensive research activity since the discovery of fatigue free La-doped Bi4Ti3O12 films on Pt electrodes. These films show superior ferroelectric properties and require a lower deposition temperature than the previously discovered SrBi2Ta2O9. Substitution of Bi by lanthanide elements other than La is of interest due to change in the magnitude of the structural distortion in the perovskite block, thereby, changing the remanent polarization. In this paper we discuss the doping of bismuth titanates with other lanthanide elements (Nd, Sm). The films were prepared by spin coating on Pt coated Si substrates. Structural characterization was performed by X-ray diffraction followed by ferroelectric characterization.

引用

页码：93 / 97

页数：5

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