Effect of strain on GaAs1-x-yNxBiy/GaAs to extract the electronic band structure and optical gain by using 16-band kp Hamiltonian

被引：0
作者：
Sharma, Arvind [1 ]
Das, T. D. [1 ]
机构：
[1] Natl Inst Technol, Dept Basic & Appl Sci, Papum Pare 791112, Arunachal Prade, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2019年 / 42卷 / 03期
关键词：
GaAs1-x-yNxBiy; kp method; strain; optical gain; GANASBI; ALLOYS; ABSORPTION; OFFSETS; STATES;
D O I：
10.1007/s12034-019-1793-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaAs1-x-yNxBiy is a suitable candidate for 1.06 mu m solid state lasers and high-efficiency solar cells. Mathematical models such as 16-band kp model is used to study the band structure, strain generated effect, band offset and variation of their parameters with Bi and N concentrations. Lattice constants of alloy GaAs1-x-yNxBiy with x/y=0.58 can match those of GaAs with the incorporation of Bi and N into GaAsNBi. Arsenic atom substitution due to the incorporation of N and Bi impurity atoms causes a significant band gap reduction of similar to 200 meV for GaAs0.937N0.023Bi0.04 alloys under lattice-matched conditions and in addition, by tuning the concentrations of N and Bi, the electrical and optical properties of GaAsNBi can be controlled. Optical gain of GaAs1-x-yNxBiy quantum well (QW) and GaAs as a barrier are calculated in generalized mode and observed the effect of the energy level of GaAs barrier on the GaAsNBi QW.
引用
收藏
页数：9
相关论文
共 34 条
[1]   Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications [J].
Aissat, A. ;
Alshehri, B. ;
Nacer, S. ;
Vilcot, J. P. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 31 :568-572
[2]   Valence band anticrossing in GaBixAs1-x [J].
Alberi, K. ;
Dubon, O. D. ;
Walukiewicz, W. ;
Yu, K. M. ;
Bertulis, K. ;
Krotkus, A. .
APPLIED PHYSICS LETTERS, 2007, 91 (05)
[3]   Valence-band anticrossing in mismatched III-V semiconductor alloys [J].
Alberi, K. ;
Wu, J. ;
Walukiewicz, W. ;
Yu, K. M. ;
Dubon, O. D. ;
Watkins, S. P. ;
Wang, C. X. ;
Liu, X. ;
Cho, Y. -J. ;
Furdyna, J. .
PHYSICAL REVIEW B, 2007, 75 (04)
[4]  
[Anonymous], MECCANICA
[5]   GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].
ASADA, M ;
KAMEYAMA, A ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753
[6]  
Bir G.L., 1976, SYMMETRY STRAIN INDU
[7]   Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds [J].
Bousbih, F ;
Ben Bouzid, S ;
Chtourou, R ;
Charfi, FF ;
Harmand, JC ;
Ungaro, G .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 21 (1-2) :251-254
[8]   Derivation of 12-and 14-band k • p Hamiltonians for dilute bismide and bismide-nitride semiconductors [J].
Broderick, Christopher A. ;
Usman, Muhammad ;
O'Reilly, Eoin P. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (12)
[9]  
Chow W. W., 1999, SEMICONDUCTOR LASER
[10]  
Chuang SL., 2009, Physics of Photonic Devices
1234