Low Voltage 40-Gb/s Ge PIN Photodetector

被引：0

作者：

Kuang, Yingxin ^{[1
,2
]}

Li, Zezheng ^{[1
,2
]}

Liu, Yang ^{[1
,2
]}

Huang, Xingrui ^{[1
,2
]}

Guan, Huan ^{[1
]}

Han, Weihua ^{[1
]}

Li, Zhiyong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Tsinghua East Rd A35, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Tsinghua East Rd A35, Beijing 101408, Peoples R China

来源：

2019 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2019年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on lateral pin and vertical pin germanium (Ge) photodetectors selectively grown at the end of silicon waveguides. The responsivities of the two types of devices at 1550 nm were measured, with the corresponding values of 0.616 A/W and 0.215 A/W. Open eye diagrams at 40 Gb/s were demonstrated under -2 V bias at the wavelength of 1550 nm. (C) 2019 The Author(s)

引用

页数：3

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