Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

被引：12

作者：

Fisicaro, Giuseppe ^{[1
]}

Pelaz, Lourdes ^{[2
]}

Aboy, Maria ^{[2
]}

Lopez, Pedro ^{[2
]}

Italia, Markus ^{[2
]}

Huet, Karim ^{[3
]}

Cristiano, Filadelfo ^{[4
]}

Essa, Zahi ^{[4
,5
]}

Yang, Qui ^{[4
]}

Bedel-Pereira, Elena ^{[4
]}

Quillec, Maurice ^{[6
]}

La Magna, Antonino ^{[1
]}

机构：

[1] CNR, IMM, I-95121 Catania, Italy

[2] Univ Valladolid, Dept Elect, E-47011 Valladolid, Spain

[3] Excico, F-92230 Gennevilliers, France

[4] CNRS, LAAS, F-31077 Toulouse, France

[5] STMicroelectronics, F-38926 Crolles, France

[6] Probion, F-92220 Bagneux, France

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 02期

关键词：

SILICON; DIFFUSION; CLUSTERS;

D O I：

10.7567/APEX.7.021301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the correlation between dopant activation and damage evolution in boron-implanted silicon under excimer laser irradiation. The dopant activation efficiency in the solid phase was measured under a wide range of irradiation conditions and simulated using coupled phase-field and kinetic Monte Carlo models. With the inclusion of dopant atoms, the presented code extends the capabilities of a previous version, allowing its definitive validation by means of detailed comparisons with experimental data. The stochastic method predicts the post-implant kinetics of the defect-dopant system in the far-from-equilibrium conditions caused by laser irradiation. The simulations explain the dopant activation dynamics and demonstrate that the competitive dopant-defect kinetics during the first laser annealing treatment dominates the activation phenomenon, stabilizing the system against additional laser irradiation steps. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 17 条

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