Tunable FBARs based on sol-gel grown PMN-PT films

被引：0

作者：

Vorobiev, A. ^{[1
]}

Gevorgian, S. ^{[1
]}

Spreitzer, M. ^{[2
]}

Veber, A. ^{[2
]}

Suvorov, D. ^{[2
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[2] Jozef Stefan Inst, Adv Mat Dept, Ljubljana SI-1000, Slovenia

来源：

2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2013年

关键词：

PMN-PT films; tunable FBAR; nonlinear electrostriction coefficient; ELECTROSTRICTION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work possibilities of using of sol-gel grown PMN-PT films in tunable film bulk acoustic wave resonators are considered. More than 4% tuning of resonance frequency under DC field less than 15 V/mu m is demonstrated. Linear and nonlinear electrostriction and induced piezoelectric coefficients of the PMN-PT films are evaluated.

引用

页码：368 / 371

页数：4

共 4 条

[1] Tunable FBARs based on sol-gel grown PMN-PT films
Vorobiev, A.
Gevorgian, S.
Spreitzer, M.
Veber, A.
Suvorov, D.
2013 EUROPEAN MICROWAVE CONFERENCE (EUMC), 2013, : 1339 - 1342
[2] Electrostrictive and piezoelectric behavior of PMN-PT thin films
Detalle, M.
Herdier, R.
Wang, G. S.
Remiens, D.
Roussel, P.
Fribourg-Blanc, E.
FERROELECTRICS, 2007, 351 : 15 - +
[3] Electromechanical properties of PMN-PT thin films prepared by pulsed laser deposition technique
Kholkin, A
Tantigate, C
Safari, A
INTEGRATED FERROELECTRICS, 1998, 22 (1-4) : 1035 - 1043
[4] Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes
Detalle, M.
Wang, G.
Remiens, D.
Ruterana, P.
Roussel, P.
Dkhil, B.
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (01) : 137 - 143

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