Stable passivation technique for high-temperature polycrystalline silicon on insulator MOSFETs for MEMS integration

被引：1

作者：

Bhat, K. N. ^{[1
]}

Daniel, R. J. ^{[1
]}

Bhattacharya, E. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Microelect & MEMS Res Lab, Madras 600036, Tamil Nadu, India

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 12期

关键词：

D O I：

10.1049/el:20060480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A passivation technique is reponed based on selective doping of the polyerystalline silicon grain boundaries with phosphorus. The polycrystalline silicon on insulator (PSOI) MOSFETs fabricated on films passivated by this method show considerable improvement in the overall performance compared with unpassivated devices. This technique is compatible with high-temperature micro-electromechanical systems (MEMS) processes and hence can be used to integrate PSOI MOSFETs with MEMS structures and devices.

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页码：721 / 722

页数：2

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