Effect of annealing on microstructural, compositional, optical, and photoelectrochemical properties of CdSe thin films

被引:7
|
作者
Thanikaikarasan, Sethuramachandran [1 ]
机构
[1] Saveettha Univ, Saveetha Sch Engn, Dept Phys, Chennai 602105, Tamil Nadu, India
关键词
Annealing; Characterization; Crystallite size; Electrodeposition; Lattice constants; Nelson-Riley plot analysis; Optical properties; PEC cells; Thin films; X-ray diffraction; ELECTRICAL-PROPERTIES; SOLUTION PH; CADMIUM; GROWTH; PARAMETERS;
D O I
10.1007/s11581-017-2292-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of CdSe have been prepared on indium-doped tin oxide-coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4 and SeO2. The process of annealing has been carried out to improve microstructural, optical, and photoelectrochemical properties of the prepared films. X-ray diffraction analysis revealed that as-deposited and annealed films exhibit hexagonal structure with preferential orientation along (002) plane. Nelson-Riley plot analysis has been carried out to determine exact value of lattice constants for as-deposited and annealed films. Optical absorption analysis has been captured to determine the value of optical parameters such as band gap, refractive index, and extinction coefficient of the deposited films. Photoelectrochemical solar cell analysis has been carried out and power output characteristics of the prepared films are investigated.
引用
收藏
页码:1529 / 1536
页数:8
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