IR laser-induced thermolysis of (chloromethyl) silane:: complex reaction involving H2Si:, H2C: and HClSi:: transients and yielding nanostructured Si/C/H phases

被引：7

作者：

Pola, J ^{[1
]}

Santos, M

Díaz, L

Jursíková, KN

Bastl, Z

Bohácek, J

Fajgar, R

Urbanová, M

机构：

[1] Acad Sci Czech Republ, Inst Chem Proc Fundamentals, Laser Chem Grp, CR-16502 Prague, Czech Republic

[2] CSIC, Inst Estructura Mat, E-28006 Madrid, Spain

[3] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, CR-18223 Prague, Czech Republic

[4] Acad Sci Czech Republ, Inst Inorgan Chem, CZ-25068 Rez, Czech Republic

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2002年 / 12卷 / 05期

关键词：

D O I：

10.1039/b200061j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Multi-pulse and single-pulse infrared laser induced thermolysis of gaseous (chloromethyl) silane, H3SiCH2Cl occurs via 1,1-HCl and H2C: elimination and dehydrogenation and yields nano-structured Si/C/H phases containing most of the Si and C atoms of the precursor. The identification of final volatile products and observation of H2Si:, H2C: and HClSi: transients by LIF spectroscopy suggest that intermediate silene isomers decompose into silylene and carbene. The deposited films are composed of SiC and polycarbosilane and their H content differs depending on the mode of the IR thermolysis.

引用

页码：1519 / 1524

页数：6

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