Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

被引：53

作者：

Calka, Pauline ^{[1
]}

Sowinska, Malgorzata ^{[1
]}

Bertaud, Thomas ^{[1
]}

Walczyk, Damian ^{[1
]}

Dabrowski, Jarek ^{[1
]}

Zaumseil, Peter ^{[1
]}

Walczyk, Christian ^{[1
]}

Gloskovskii, Andrei ^{[2
]}

Cartoixa, Xavier ^{[3
]}

Sune, Jordi ^{[3
]}

Schroeder, Thomas ^{[1
,4
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

[2] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany

[3] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[4] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 07期

关键词：

RRAM; Ti/HfO2; oxygen vacancy stability; oxygen diffusion; amorphous HfO2; reliability; PROGRAM; SYSTEMS; ZRO2;

D O I：

10.1021/am500137y

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental theoretical approach. Based on the use of oxygen-isotope marked Hf*O-2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.

引用

页码：5056 / 5060

页数：5

共 25 条

[1] THE CRYSTAL STRUCTURE OF ZRO2 AND HFO2
ADAM, J
ROGERS, MD
[J]. ACTA CRYSTALLOGRAPHICA, 1959, 12 (11): : 951 - 951
[2] [Anonymous], IEEE INT EL DEV M
[3] [Anonymous], 2012, NANOELECTRONICS INFO
[4] [Anonymous], PHYS REV B
[5] In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy
Bertaud, Thomas
Sowinska, Malgorzata
Walczyk, Damian
Thiess, Sebastian
Gloskovskii, Andrei
Walczyk, Christian
Schroeder, Thomas
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (14)
[6] Oxygen vacancy in monoclinic HfO2:: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments
Broqvist, Peter
Pasquarello, Alfredo
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (26)
[7] Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM
Cagli, C.
Buckley, J.
Jousseaume, V.
Cabout, T.
Salaun, A.
Grampeix, H.
Nodin, J. F.
Feldis, H.
Persico, A.
Cluzel, J.
Lorenzi, P.
Massari, L.
Rao, R.
Irrera, F.
Aussenac, F.
Carabasse, C.
Coue, M.
Calka, P.
Martinez, E.
Perniola, L.
Blaise, P.
Fang, Z.
Yu, Y. H.
Ghibaudo, G.
Deleruyelle, D.
Bocquet, M.
Mueller, C.
Padovani, A.
Pirrotta, O.
Vandelli, L.
Larcher, L.
Reimbold, G.
de Salvo, B.
[J]. 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
[8] Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures
Calka, P.
Martinez, E.
Delaye, V.
Lafond, D.
Audoit, G.
Mariolle, D.
Chevalier, N.
Grampeix, H.
Cagli, C.
Jousseaume, V.
Guedj, C.
[J]. NANOTECHNOLOGY, 2013, 24 (08)
[9] Impact of Engineered Ti Layer on the Memory Performance of HfOx-Based Resistive Memory
Chen, Pang-Shiu
Lee, Heng-Yuan
Chen, Yu-Sheng
Gu, Pei-Yi
Chen, Frederick
Tsai, Ming-Jinn
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (12) : H423 - H425
[10] The General Utility Lattice Program (GULP)
Gale, JD
Rohl, AL
[J]. MOLECULAR SIMULATION, 2003, 29 (05) : 291 - 341

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