Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

被引：55

作者：

Calka, Pauline ^{[1
]}

Sowinska, Malgorzata ^{[1
]}

Bertaud, Thomas ^{[1
]}

Walczyk, Damian ^{[1
]}

Dabrowski, Jarek ^{[1
]}

Zaumseil, Peter ^{[1
]}

Walczyk, Christian ^{[1
]}

Gloskovskii, Andrei ^{[2
]}

Cartoixa, Xavier ^{[3
]}

Sune, Jordi ^{[3
]}

Schroeder, Thomas ^{[1
,4
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

[2] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany

[3] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[4] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 07期

关键词：

RRAM; Ti/HfO2; oxygen vacancy stability; oxygen diffusion; amorphous HfO2; reliability; PROGRAM; SYSTEMS; ZRO2;

D O I：

10.1021/am500137y

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental theoretical approach. Based on the use of oxygen-isotope marked Hf*O-2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.

引用

页码：5056 / 5060

页数：5

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