Co-doped TiO2 epitaxial thin films grown by sputtering

被引:16
作者
Han, GC
Luo, P
Guo, ZB
Nahar, FU
Tay, M
Wu, YH
Wang, SJ
机构
[1] DataStorage Inst, Singapore 117608, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
[3] Inst Mat Res & Engn, Singapore 117602, Singapore
关键词
magnetism; anatase; sputtering; epitaxial growth; titanium oxide;
D O I
10.1016/j.tsf.2005.10.055
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Co-doped TiO2 anatase thin films were epitaxially grown by Sputtering. It is found that the films have good epitaxial structure and contain single anatase phase. Co in the films is in +2 oxidation state. However, there are also pure metal Co clusters on the film surface. Saturation moments (m(s)) of films are found to be independent of carrier density, which implies that the carriers are unimportant for the ferromagnetism in these Co-doped TiO2 anatase films. Neither an anomalous Hall effect nor a characteristic magnetoresistance are observed even at a temperature down to 2.2 K, which indicates that Co-doped anatase films may not be all intrinsic magnetic semiconductor. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码:137 / 140
页数:4
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