Band gap states of interstitial nickel-complexes in diamond

被引:4
作者
Larico, R
Justo, JF
Machado, WVM
Assali, LVC
机构
[1] Univ Sao Paulo, Escola Politecn, BR-05424970 Sao Paulo, SP, Brazil
[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil
关键词
synthetic diamond; diamond; nickel impurity; NIRIM centers;
D O I
10.1016/j.physb.2005.12.075
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We carried an ab initio investigation on the microscopic structure of complexes in diamond involving interstitial nickel. The calculations were performed using an all electron total energy methodology, based on the full-potential approximation. We computed the configurational symmetry, spin, formation and transition energies, electronic structure, and hyperfine parameters of active centers commonly found in synthetic diamond. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:292 / 295
页数:4
相关论文
共 19 条
  • [11] EPR STUDIES OF INTERSTITIAL NI CENTERS IN SYNTHETIC DIAMOND CRYSTALS
    ISOYA, J
    KANDA, H
    UCHIDA, Y
    [J]. PHYSICAL REVIEW B, 1990, 42 (16): : 9843 - 9852
  • [12] FOURIER-TRANSFORM AND CONTINUOUS-WAVE EPR STUDIES OF NICKEL IN SYNTHETIC DIAMOND - SITE AND SPIN MULTIPLICITY
    ISOYA, J
    KANDA, H
    NORRIS, JR
    TANG, J
    BOWMAN, MK
    [J]. PHYSICAL REVIEW B, 1990, 41 (07): : 3905 - 3913
  • [13] Isolated nickel impurities in diamond: A microscopic model for the electrically active centers
    Larico, R
    Assali, LVC
    Machado, WVM
    Justo, JF
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (05) : 720 - 722
  • [14] EPR studies of a nickel-boron centre in synthetic diamond
    Nadolinny, VA
    Baker, JM
    Newton, ME
    Kanda, H
    [J]. DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 627 - 630
  • [15] A study of 13C hyperfine structure in the EPR of nickel-nitrogen-containing centres in diamond and correlation with their optical properties
    Nadolinny, VA
    Yelisseyev, AP
    Baker, JM
    Newton, ME
    Twitchen, DJ
    Lawson, SC
    Yuryeva, OP
    Feigelson, BN
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (38) : 7357 - 7376
  • [16] Perdew JP, 1997, PHYS REV LETT, V78, P1396, DOI 10.1103/PhysRevLett.77.3865
  • [17] SINGH D, 1994, PLANEWAVES PSEDOPOTE
  • [18] VLAHA P, 1999, WIEN9M FULL POTENTIA
  • [19] Iron-acceptor pairs in silicon: Structure and formation processes
    Zhao, S
    Assali, LVC
    Justo, JF
    Gilmer, GH
    Kimerling, LC
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) : 2744 - 2754